2005. 8. 30 1/2 semiconductor technical data kta1279 epitaxial planar pnp transistor revision no : 1 high voltage application. telephone application. maximum rating (ta=25 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 2. collector 3. base + _ electrical characteristics (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo -300 v collector-emitter voltage v ceo -300 v emitter-base voltage v ebo -5.0 v collector current i c -500 ma emitter current i e 500 ma collector power dissipation p c 625 mw junction temperature t j 150 storage temperature t stg -55 150 note :* pulse test : pw 300 s, duty cycle 2% characteristic symbol test condition min. typ. max. unit collector cut-off current v (br)cbo i c =-100 a, i e =0 -300 - - v emitter cut-off current v (br)ceo i c =-1.0ma, i b =0 -300 - - v dc current gain h fe * i c =-1.0ma, v ce =-10v 25 - - i c =-10ma, v ce =-10v 40 - - i c =-30ma, v ce =-10v 25 - - collector-emitter saturation voltage v ce(sat) * i c =-20ma, i b =-2.0ma - - -0.5 v base-emitter saturation voltage v be(sat) * i c =-20ma, i b =-2.0ma - - -0.9 v transition frequency f t v ce =-20v, i c =-10ma, f=100mhz 50 - - mhz collector output capacitance c ob v cb =-20v, i e =0, f=1mhz - - 6.0 pf
2005. 8. 30 2/2 kta1279 revision no : 1 transition frequency f (mhz) 0 t -30 -10 -3 -1 collector current i (ma) c f - i c - v r reverse voltage v (v) -0.1 -0.3 -1 -3 ob 1 collector output capacitance saturation voltage 0 be(sat), -30 -10 -3 -1 collector current i (ma) c v v - i h - i c collector current i (ma) -1 -3 -10 -30 300 fe dc current gain h 10 i - v ce collector-emitter voltage v (v) -3 -5 -10 -30 c -5 collector current i (ma) ob r c (pf) -10 -30 -100 -300 -1k 3 5 10 30 50 100 c ib ob c tc -100 -5 -50 30 50 100 t =25 c v =20vdc j ce be(sat) , c v v (v) -100 -5 -50 -0.2 -0.4 -0.6 -0.8 -1.0 v i /i =10 v be(sat) c b ce(sat) ce(sat) fe c -100 -5 -50 100 30 50 t =125 c j j t =25 c j t =-55 c ce v =10vdc cce -50 -100 -300 -10 -30 -50 -100 -300 -500 1 .5 watt t hermal limitation tc=25 c 625 mw thermal limitation ta=25 c bonding wire limitation second break down limitation t =150 c j 100 s 1.0 m s dc ce(sat)
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